 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTS4172N Power MOSFET 30 V, 1.7 A, Single N-Channel, SC-70 Features * * * * Low On-Resistance Low Gate Threshold Voltage Halide Free This is a Pb-Free Device http://onsemi.com V(BR)DSS RDS(on) MAX 93 mW @ 10 V 30 V 100 mW @ 4.5 V 140 mW @ 2.5 V ID MAX 1.7 A 1.5 A 1.0 A Applications * Low Side Load Switch * DC-DC Converters (Buck and Boost Circuits) * Optimized for Battery and Load Management Applications in MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Steady State t5s Pulsed Drain Current tp = 10 ms IDM TJ, Tstg IS TL TA = 25C TA = 85C TA = 25C TA = 25C PD 0.350 3.4 -55 to 150 0.25 260 ID Symbol VDSS VGS Value 30 12 1.6 1.13 1.70 0.294 Portable Equipment like Cell Phones, PDA's, Media Players, etc. SC-70/SOT-323 (3 LEADS) D Unit V V G A S 3 W 1 A C A C 2 SC-70/SOT-323 CASE 419 STYLE 8 MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain TFMG G 1 Gate 2 Source Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TF = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 5 s (Note 1) Symbol RqJA RqJA Max 425 360 Unit C/W ORDERING INFORMATION Device NTS4172NT1G Package SC-70 (Pb-Free) Shipping 3000/Tape & Reel 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. * Date code orientation may vary depending upon manufacturing location (c) Semiconductor Components Industries, LLC, 2008 June, 2008 - Rev. 0 1 Publication Order Number: NTS4172N/D NTS4172N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On-Resistance VGS(TH) VGS(TH) /TJ RDS(on) VGS = 10 V, ID = 1.7 A VGS = 4.5 V, ID = 1.5 A VGS = 2.5 V, ID = 1.0 A Forward Transconductance gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD RG td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, IS = 1.0 A, dISD/dt = 100 A/ms VGS = 0 V, IS = 1.0 A VGS = 4.5 V, VDD = 15 V, ID = 1.7 A, RG = 3 W VGS = 4.5 V, VDS = 15 V, ID = 1.7 A VGS = 0 V, f = 1.0 MHz, VDS = 15 V VDS = 5.0 V, ID = 1.7 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 7.5 4.4 16.1 2.2 ns 381 39.6 32.6 4.38 0.40 0.62 1.33 4.5 W nC pF VGS = VDS, ID = 250 mA 0.6 1.0 3.1 58 64 79 4.2 93 100 140 S 1.4 V mV/C mW V(BR)DSS V(BR)DSS /TJ IDSS IGSS VGS = 0 V, ID = 250 mA ID = 250 mA, Reference to 25C VGS = 0 V, VDS = 24 V, TJ = 25C VGS = 0 V, VDS = 24 V, TJ = 125C VDS = 0 V, VGS = "12 V 30 8.4 1.0 5.0 100 V mV/C mA nA Symbol Test Condition Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 0.76 7.9 5.0 2.9 2.0 nC 1.0 V ns 2. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTS4172N TYPICAL CHARACTERISTICS 2.5 2.0 1.5 1.0 0.5 0 2.0 V 10 V 2.5 V 3.5 4.5 V TJ = 25C 1.8 V ID, DRAIN CURRENT (A) 3.0 2.5 2.0 1.5 1.0 0.5 TJ = 125C TJ = 25C VDS 10 V ID, DRAIN CURRENT (A) 1.7 V 1.6 V 1.5 V VGS = 1.4 V 0 0.5 1.0 1.5 2.0 2.5 3.0 TJ = -55C 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VGS, GATE-TO-SOURCE VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.12 0.10 0.08 0.06 0.04 0.02 ID = 1.7 A TJ = 25C 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0.5 Figure 2. Transfer Characteristics TJ = 25C VGS = 2.5 V VGS = 4.5 V VGS = 10 V 1 2 3 4 5 6 7 8 9 10 1.0 1.5 2.0 VGS, GATE-TO-SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate Voltage 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.4 1.2 1.0 0.8 0.6 -50 10 ID = 1.7 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 10,000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 100 TJ = 125C -25 0 25 50 75 100 125 150 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTS4172N TYPICAL CHARACTERISTICS VGS, GATE-TO-SOURCE VOLTAGE (V) 700 600 C, CAPACITANCE (pF) 500 400 300 200 100 0 Crss 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Coss VGS = 0 V TJ = 25C Ciss 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1.0 2.0 3.0 ID = 1.7 A TJ = 25C 4.0 5.0 Qgs Qgd QT QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 1.5 IS, SOURCE CURRENT (A) VDD = 15 V ID = 1.7 A VGS = 4.5 V td(off) tf 10 tr td(on) Figure 8. Gate-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 1.0 t, TIME (ns) 100 0.5 1.0 1.0 10 RG, GATE RESISTANCE (W) 100 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTS4172N PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE M e1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 3 HE 1 2 E b e A 0.05 (0.002) A1 A2 L c DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTS4172N/D |
Price & Availability of NTS4172NT1G
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |